The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 2022

Filed:

Apr. 10, 2020
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Joon Seok Park, Yongin-si, KR;

So Young Koo, Yongin-si, KR;

Myoung Hwa Kim, Seoul, KR;

Eok Su Kim, Seoul, KR;

Tae Sang Kim, Seoul, KR;

Hyung Jun Kim, Seoul, KR;

Yeon Keon Moon, Hwaseong-si, KR;

Geun Chul Park, Suwon-si, KR;

Jun Hyung Lim, Seoul, KR;

Kyung Jin Jeon, Incheon, KR;

Hye Lim Choi, Yongin-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); G09G 3/3266 (2016.01); G09G 3/3233 (2016.01); G09G 3/3291 (2016.01); H01L 29/786 (2006.01); H01L 29/49 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
G09G 3/3266 (2013.01); G09G 3/3233 (2013.01); G09G 3/3291 (2013.01); H01L 27/3262 (2013.01); H01L 27/3276 (2013.01); H01L 29/4908 (2013.01); H01L 29/7869 (2013.01); H01L 29/78603 (2013.01); G09G 2300/0426 (2013.01);
Abstract

A display device, includes: a pixel connected to a scan line and a data line crossing the scan line, wherein the pixel includes a light emitting element, a driving transistor configured to control a driving current supplied to the light emitting element according to a data voltage received from the data line, and a first switching transistor configured to apply the data voltage of the data line to the driving transistor according to a scan signal applied to the scan line; wherein the driving transistor includes a first active layer including an oxide semiconductor and a first oxide layer on the first active layer and including an oxide semiconductor; and wherein the first switching transistor includes a second active layer on the first active layer and including the same oxide semiconductor as the first oxide layer.


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