The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2022
Filed:
Jun. 27, 2022
Wuhan University, Hubei, CN;
Sheng Liu, Hubei, CN;
Wei Shen, Hubei, CN;
Gai Wu, Hubei, CN;
Yuzheng Guo, Hubei, CN;
Kang Liang, Hubei, CN;
Qijun Wang, Hubei, CN;
Shizhao Wang, Hubei, CN;
WUHAN UNIVERSITY, Hubei, CN;
Abstract
The present disclosure relates to a method for growing and doping a strained diamond based on a chemical vapor deposition (CVD) method. The method comprises: depositing a gradient buffer layer and a relaxation layer on a substrate layer in sequence by the CVD method; and finally, depositing a CVD strained diamond layer on the relaxation layer and performing doping by the CVD method. According to the method, a lattice constant of the relaxation layer prepared by utilizing the CVD method is greater than a lattice constant of the diamond, so that a diamond generates a stretching strain. In growing and doping processes, the CVD strained diamond is in a stretching strain state. Therefore, a formation energy of a doped element is low, and it is easy to dope the diamond, so that a doping concentration of the diamond is high.