The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2022
Filed:
Mar. 19, 2020
Seoul Viosys Co., Ltd., Gyeonggi-do, KR;
Se Hee Oh, Gyeonggi-do, KR;
Jae Kwon Kim, Gyeonggi-do, KR;
Jong Kyu Kim, Gyeonggi-do, KR;
Hyun A Kim, Gyeonggi-do, KR;
Joon Sup Lee, Gyeonggi-do, KR;
SEOUL VIOSYS CO., LTD., Gyeonggi-Do, KR;
Abstract
A light emitting diode chip having improved light extraction efficiency is provided. The light emitting diode chip includes a substrate, a first conductivity type semiconductor layer, a mesa, a side coating layer, and a reflection structure. The first conductivity type semiconductor layer is disposed on the substrate. The mesa includes an active layer and a second conductivity type semiconductor layer. The mesa is disposed on a partial region of the first conductivity type semiconductor layer to expose an upper surface of the first conductivity type semiconductor layer along an edge of the first conductivity type semiconductor layer. The side coating layer(s) covers a side surface of the mesa. The reflection structure is spaced apart from the side coating layer(s) and disposed on the exposed first conductivity type semiconductor layer.