The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2022

Filed:

Mar. 18, 2019
Applicant:

Lg Electronics Inc., Seoul, KR;

Inventors:

Yu Jin Lee, Seoul, KR;

Seongtak Kim, Seoul, KR;

Seh-Won Ahn, Seoul, KR;

Jin-Won Chung, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0725 (2012.01); H01L 31/0687 (2012.01); H01L 27/30 (2006.01); H01L 21/306 (2006.01); H01L 31/0747 (2012.01); H01G 9/20 (2006.01); H01L 31/20 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1804 (2013.01); H01G 9/20 (2013.01); H01L 21/30604 (2013.01); H01L 27/302 (2013.01); H01L 31/0687 (2013.01); H01L 31/0725 (2013.01); H01L 31/0747 (2013.01); H01L 31/186 (2013.01); H01L 31/208 (2013.01);
Abstract

Discussed is a tandem solar cell manufacturing method including etching a crystalline silicon substrate, whereby a solar cell can be obtained which does not have a pyramid-shaped defect on a surface of the substrate, inhibits the generation of a shunt through the substrate having excellent surface roughness properties, and can secure fill factor properties, the solar cell being capable of being obtained through the tandem solar cell manufacturing method. The method includes preparing a crystalline silicon substrate; performing an isotropic etching process of the substrate; and removing a saw damage on a surface of the substrate by performing an anisotropic etching process of the isotropically etched substrate.


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