The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2022
Filed:
Apr. 23, 2019
Applicant:
Kobe Steel, Ltd., Kobe, JP;
Inventors:
Mototaka Ochi, Hyogo, JP;
Hiroshi Goto, Hyogo, JP;
Assignee:
Kobe Steel, Ltd., Kobe, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01);
Abstract
A thin film transistor includes at least a gate electrode, a gate insulating film, an oxide semiconductor layer, source/drain electrodes, and at least one layer of a passivation film on a substrate. Metal elements constituting the oxide semiconductor layer include In, Ga, Zn, and Sn. Respective ratios of the metal elements to a total (In+Ga+Zn+Sn) of the metal elements in the oxide semiconductor layer satisfy: In: 30 atom % or more and 45 atom % or less, Ga: 5 atom % or more and less than 20 atom %, Zn: 30 atom % or more and 60 atom % or less, and Sn: 4.0 atom % or more and less than 9.0 atom %.