The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2022
Filed:
Sep. 21, 2020
Panasonic Corporation, Kadoma, JP;
PANASONIC HOLDINGS CORPORATION, Kadoma, JP;
Abstract
A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer of a first conductivity type; a second nitride semiconductor layer of a second conductivity type; an electron transport layer and an electron supply layer provided, in that order from a side on which the substrate is located, above the second nitride semiconductor layer and on an inner surface of a first opening; a gate electrode provided above the electron supply layer and covering the first opening; a source electrode provided in a second opening and connected to the second nitride semiconductor layer; a drain electrode; a third opening at an outermost edge part in a plan view of the substrate; and a potential fixing electrode provided in the third opening, the potential fixing electrode being connected to the second nitride semiconductor layer and in contact with neither the electron transport layer nor the electron supply layer.