The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2022
Filed:
Feb. 24, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Chan Kyung Kim, Hwaseong-si, KR;
Eun Ji Lee, Seongnam-si, KR;
Ji Yean Kim, Hwaseong-si, KR;
Tae Seong Kim, Yongin-si, KR;
Jae Wook Joo, Daejeon, KR;
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Abstract
A magnetic junction memory device is provided. The magnetic junction memory device including a sensing circuit including a sensing node, the sensing node being connected to a first end of a transistor and configured to change a voltage of the sensing node in accordance with a resistance of a magnetic junction memory cell, a gating voltage generator circuit configured to generate a gating voltage of the transistor using a reference resistor and a reference voltage, and a read circuit configured to read data from the magnetic junction memory cell using the reference voltage and the voltage of the sensing node.