The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2022

Filed:

Mar. 27, 2020
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Dong Bum Lee, Suwon-si, KR;

Chui Ho Kim, Cheonan-si, KR;

Yun Hwan Park, Seoul, KR;

In Jun Bae, Seoul, KR;

Woo Ri Seo, Seoul, KR;

Jin Jeon, Seoul, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 27/12 (2006.01); H01L 23/552 (2006.01); H01L 31/14 (2006.01); G09G 3/3233 (2016.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); H01L 23/552 (2013.01); H01L 31/14 (2013.01); G09G 3/3233 (2013.01); G09G 2360/14 (2013.01);
Abstract

A display device includes: a substrate; an active layer; a first insulating layer on the active layer; a gate electrode; a second insulating layer on the first conductive layer; a second conductive layer on the second insulating layer; a third insulating layer on the second conductive layer; and a source electrode connected to the source region of the first active pattern through a contact hole passing through the first insulating layer and the second insulating layer, and a drain electrode connected to the drain region, wherein the first active pattern, the gate electrode, the source electrode and the drain electrode constitute a thin film transistor, the display device further comprising at least one light shielding pattern around the thin film transistor, wherein the light shielding pattern includes a side light shielding pattern such that the third conductive layer passes through at least the third insulating layer.


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