The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2022

Filed:

Mar. 04, 2021
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Zhixin Cui, Nagoya, JP;

Tatsuya Hinoue, Yokkaichi, JP;

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11519 (2017.01); H01L 27/11556 (2017.01); H01L 27/1157 (2017.01); H01L 27/11524 (2017.01); H01L 27/11565 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 27/1157 (2013.01); H01L 27/11519 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01);
Abstract

A memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening and including a vertical semiconductor channel and a memory material layer. A vertical stack of insulating material portions can be provided at levels of the insulating layers to provide a laterally-undulating profile to the memory material layer. Alternatively, a combination of inner insulating spacers and outer insulating spacers can be employed to provide a laterally-undulating profile to the memory material layer.


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