The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2022

Filed:

Dec. 09, 2020
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Naomi Fukumaki, Yokkaichi, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11578 (2017.01); H01L 27/11568 (2017.01); H01L 23/522 (2006.01); H01L 21/321 (2006.01); H01L 21/02 (2006.01); H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11578 (2013.01); H01L 21/02019 (2013.01); H01L 21/0223 (2013.01); H01L 21/3212 (2013.01); H01L 23/5226 (2013.01); H01L 27/11568 (2013.01); H01L 21/2022 (2013.01);
Abstract

In one embodiment, a semiconductor device includes a stacked film alternately including a plurality of electrode layers and a plurality of insulating layers. The device further includes a first insulator, a charge storage layer, a second insulator and a first semiconductor layer that are disposed in order in the stacked film. The device further includes a plurality of first films disposed between the first insulator and the plurality of insulating layers. Furthermore, at least one of the first films includes a second semiconductor layer.


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Fukumaki, Naomi. (2022). Semiconductor device and method of manufacturing the same (U.S. Patent No. 11515323). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11515323

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