The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2022
Filed:
Jun. 04, 2020
Applicants:
National Applied Research Laboratories, Taipei, TW;
Epistar Corporation, Hsinchu, TW;
Inventors:
Shih-Pang Chang, Hsinchu, TW;
Guang-Li Luo, Hsinchu, TW;
Szu-Hung Chen, Hsinchu, TW;
Wen-Kuan Yeh, Hsinchu, TW;
Jen-Inn Chyi, Hsinchu, TW;
Meng-Yang Chen, Hsinchu, TW;
Rong-Ren Lee, Hsinchu, TW;
Shih-Chang Lee, Hsinchu, TW;
Ta-Cheng Hsu, Hsinchu, TW;
Assignees:
National Applied Research Laboratories, Taipei, TW;
EPISTAR Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/161 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); H01L 21/823821 (2013.01); H01L 29/16 (2013.01); H01L 29/20 (2013.01); H01L 29/66795 (2013.01); H01L 29/7853 (2013.01); H01L 29/161 (2013.01);
Abstract
A method of making a semiconductor device includes: providing a substrate; forming an insulating layer on the substrate; forming a first trench in the insulating layer; forming a first semiconductor layer in the first trench; and removing a portion of the insulating layer to expose the first semiconductor layer.