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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11515227 B1

PDFFull Text
Date of Patent:
Nov. 29, 2022

Filed:

Oct. 05, 2020

Semiconductor die including edge ring structures and methods for making the same

Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Toshiaki Matsumura, Yokkaichi, JP;

Nao Nagase, Yokkaichi, JP;

Yoshihiko Saito, Yokkaichi, JP;

Nobutoshi Sugawara, Yokkaichi, JP;

Takahiro Tanamachi, Yokkaichi, JP;

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:

The Marbury Law Group PLLC

Primary Examiner:

Galina G Yushina

Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/31 (2006.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); H01L 21/56 (2006.01); H01L 27/11565 (2017.01); H01L 27/11519 (2017.01);
U.S. Cl.
CPC ...
H01L 23/3192 (2013.01); H01L 21/56 (2013.01); H01L 23/5226 (2013.01); H01L 27/11519 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 27/11582 (2013.01);
Abstract

Semiconductor devices laterally surrounded by at least one dielectric material portion are formed over a substrate. At least one edge seal ring structure is formed around the semiconductor devices and the at least one dielectric material portion. One or more of the at least one edge seal ring structure has a horizontal cross-sectional profile that includes laterally-extending regions that extend laterally with a uniform width between an inner sidewall and an outer sidewall, and notch regions connecting neighboring pairs of the laterally-extending regions and having a greater width than the uniform width. Cavities in the laterally-extending regions are connected to cavities in the notch regions to allow outgassing from the material of the at least one edge seal ring structure.

Find Patent Forward Citations

Matsumura, Toshiaki. (2022). Semiconductor die including edge ring structures and methods for making the same (U.S. Patent No. 11515227). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11515227

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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