The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2022
Filed:
Sep. 11, 2020
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/38 (2006.01); C23C 8/36 (2006.01); C23C 8/24 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0217 (2013.01); C23C 8/24 (2013.01); C23C 8/36 (2013.01); C23C 16/38 (2013.01); H01L 21/0234 (2013.01); H01L 21/02271 (2013.01); H01L 21/02329 (2013.01); H01L 21/02211 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01);
Abstract
Methods for forming a SiBN film comprising depositing a film on a feature on a substrate. The method comprises in a first cycle, depositing a SiB layer on a substrate in a chamber using a chemical vapor deposition process, the substrate having at least one feature thereon, the at least one feature comprising an upper surface, a bottom surface and sidewalls, the SiB layer formed on the upper surface, the bottom surface and the sidewalls. In a second cycle, the SiB layer is treated with a plasma comprising a nitrogen-containing gas to form a conformal SiBN film.