The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2022

Filed:

Apr. 20, 2021
Applicant:

Microchip Technology Inc., Chandler, AZ (US);

Inventors:

Lorenzo Zuolo, Lusia, IT;

Rino Micheloni, Turate, IT;

Assignee:

Microchip Technology Inc., Chandler, AZ (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G06N 5/04 (2006.01); G11C 16/26 (2006.01); G11C 16/10 (2006.01); G11C 16/14 (2006.01); G11C 16/08 (2006.01); G06N 3/04 (2006.01); G06N 3/063 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3495 (2013.01); G06N 3/0454 (2013.01); G06N 3/063 (2013.01); G06N 5/04 (2013.01); G11C 16/08 (2013.01); G11C 16/102 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01); G11C 16/3404 (2013.01);
Abstract

A method for reading a flash memory device includes storing configuration files of reliability-state Classification Neural Network (CNN) models and Regression Neural Network (RNN) inference models, and storing reliability-state tags corresponding to reliability states. The current number of P/E cycles is identified and a reliability-state CNN model is selected corresponding to the current number of P/E cycles. A neural network operation of the selected reliability-state CNN model is performed to identify a predicted reliability state. Corresponding reliability-state tags are identified and a corresponding RNN inference model is selected. A neural network operation of the selected RNN inference model is performed, using the reliability-state tags as input, to generate output indicating the shape of a threshold-voltage-shift read-error (TVS-RE) curve. Threshold Voltage Shift Offset (TVSO) values are identified corresponding to a minimum value of the TVS-RE curve and a read is performed using a threshold-voltage-shift read at the identified TVSO values.


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