The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2022

Filed:

Aug. 26, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Woojin Rim, Hwaseong-si, KR;

Yongho Kim, Seoul, KR;

Hoonki Kim, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/408 (2006.01); G11C 11/4074 (2006.01); G11C 11/4097 (2006.01); G11C 11/4094 (2006.01); G11C 5/14 (2006.01); G11C 11/419 (2006.01); G11C 11/418 (2006.01); G11C 11/413 (2006.01); G11C 7/12 (2006.01); G11C 11/417 (2006.01); G11C 11/416 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4085 (2013.01); G11C 5/14 (2013.01); G11C 7/12 (2013.01); G11C 11/4074 (2013.01); G11C 11/4087 (2013.01); G11C 11/4094 (2013.01); G11C 11/4097 (2013.01); G11C 11/413 (2013.01); G11C 11/416 (2013.01); G11C 11/417 (2013.01); G11C 11/418 (2013.01); G11C 11/419 (2013.01);
Abstract

A memory device is provided. The memory device includes a cell array having memory cells; n word lines sequentially arranged and including a first word line, an n-th word line, and word lines interposed between the first word line and the n-th word line; bit lines; a first power node located adjacent to the first word line; a second power node located adjacent to the n-th word line; a first switch connected between the first power node and the cell array; a write driver located adjacent to the n-th word line and connected to the bit lines; and a switch controller configured to control the first switch to isolate the first power node from the memory cells during a write operation on memory cells connected to the first word line.


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