The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2022

Filed:

Jan. 22, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Krishna T. Malladi, San Jose, CA (US);

Mu-Tien Chang, Santa Clara, CA (US);

Dimin Niu, Sunnyvale, CA (US);

Hongzhong Zheng, Los Gatos, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/08 (2016.01); G06F 12/0879 (2016.01); G11C 11/417 (2006.01);
U.S. Cl.
CPC ...
G06F 12/0879 (2013.01); G11C 11/417 (2013.01); G06F 2212/603 (2013.01);
Abstract

A high bandwidth memory system. In some embodiments, the system includes: a memory stack having a plurality of memory dies and eight 128-bit channels; and a logic die, the memory dies being stacked on, and connected to, the logic die; wherein the logic die may be configured to operate a first channel of the 128-bit channels in: a first mode, in which a first 64 bits operate in pseudo-channel mode, and a second 64 bits operate as two 32-bit fine-grain channels, or a second mode, in which the first 64 bits operate as two 32-bit fine-grain channels, and the second 64 bits operate as two 32-bit fine-grain channels.


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