The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2022
Filed:
Aug. 06, 2018
Applicant:
Sumitomo Chemical Company, Limited, Tokyo, JP;
Inventors:
Kuniyuki Kakushima, Yokohama, JP;
Takuya Hoshii, Yokohama, JP;
Hitoshi Wakabayashi, Yokohama, JP;
Kazuo Tsutsui, Yokohama, JP;
Hiroshi Iwai, Yokohama, JP;
Taiki Yamamoto, Hitachi, JP;
Assignee:
SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2020.01); H01L 29/207 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2601 (2013.01); H01L 29/207 (2013.01);
Abstract
One embodiment of the present invention provides a method for evaluating the electrical defect density of a semiconductor layer, which comprises: a step for measuring an electric current by applying a voltage to a semiconductor elementwhich comprises a GaN layerthat serves as a semiconductor layer; and a step for deriving the electrical defect density in the GaN layerwith use of the measured electric current value.