The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2022

Filed:

Oct. 12, 2018
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Toshiaki Ono, Kanagawa, JP;

Satoko Iida, Kanagawa, JP;

Tomohiko Asatsuma, Kanagawa, JP;

Yoshiaki Kitano, Kanagawa, JP;

Yusuke Matsumura, Kanagawa, JP;

Ryoko Kajikawa, Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04N 5/355 (2011.01); H04N 5/378 (2011.01); H04N 5/3745 (2011.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H04N 5/3559 (2013.01); H01L 27/14603 (2013.01); H01L 27/14614 (2013.01); H01L 27/14621 (2013.01); H01L 27/14645 (2013.01); H04N 5/378 (2013.01); H04N 5/37457 (2013.01);
Abstract

Provided is a solid-state imaging element configured to automatically extend dynamic range for each unit pixel. A solid-state imaging element includes, for a unit pixel, a first photoelectric conversion element, a first accumulation portion that accumulates electric charge obtained by photoelectric conversion by the first photoelectric conversion element, and a first film that is electrically connected to the first accumulation portion and has an optical characteristic changing according to applied voltage. Furthermore, the unit pixel of the solid-state imaging element can further include a first transfer transistor that transfers electric charge obtained by photoelectric conversion by the photoelectric conversion element to the first accumulation portion, an amplification transistor that is electrically connected to the first accumulation portion, and a selection transistor that is electrically connected to the amplification transistor.


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