The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2022

Filed:

Aug. 17, 2020
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Jisun Ryu, Sudbury, MA (US);

Yan Kit Gary Hau, Westford, MA (US);

Guoqing Fu, Medford, MA (US);

Xinwei Wang, Dunstable, MA (US);

Xiangdong Zhang, Westford, MA (US);

Chenliang Du, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/30 (2006.01); H03F 3/21 (2006.01);
U.S. Cl.
CPC ...
H03F 3/21 (2013.01); H03F 2200/171 (2013.01); H03F 2200/294 (2013.01); H03F 2200/451 (2013.01);
Abstract

An amplifier circuit includes an amplifier configured to receive a radio frequency (RF) input signal from an input node, a bias circuit comprising a reference transistor coupled between a reference current source and ground, and a bias transistor coupled to the reference transistor and configured to generate a main bias current to bias the amplifier, an input power sense circuit coupled to the input node, and an additional transistor coupled to the input power sense circuit and to the bias transistor, the additional transistor configured to generate an additional bias current to bias the amplifier, the additional bias current responsive to a power level of the RF input signal.


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