The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2022

Filed:

Aug. 28, 2018
Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventors:

Satoru Nate, Kyoto, JP;

Yoshinori Sato, Kyoto, JP;

Assignee:

Rohm Co., Ltd., Kyoto, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02M 3/335 (2006.01); H02M 1/08 (2006.01); H02M 1/42 (2007.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H02M 3/335 (2013.01); H02M 1/08 (2013.01); H02M 1/4208 (2013.01); H01L 27/0629 (2013.01); H01L 28/20 (2013.01); H01L 29/402 (2013.01); H01L 29/408 (2013.01); H01L 29/7816 (2013.01);
Abstract

This power supply IC is a semiconductor integrated circuit device serving as a main part for controlling a switching power supply and is formed by integrating a feedback resistor and an output feedback control unit on a single semiconductor substrate, said feedback resistor generating a feedback voltage by dividing the output voltage of the switching power supply (or the induced voltage appearing across an auxiliary winding provided on the primary side of a transformer included in an insulation-type switching power supply), said output feedback control unit performing output feedback control of the switching power supply in accordance with the feedback voltage. The feedback resistor is a polysilicon resistor having a withstand voltage of 100 V or more. A high-voltage region having higher withstand voltage in the substrate thickness direction than the other region is formed in the semiconductor substrate, and the feedback resistor is formed on the high-voltage region.


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