The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2022

Filed:

Dec. 20, 2018
Applicant:

Dowa Electronics Materials Co., Ltd., Tokyo, JP;

Inventors:

Jumpei Yamamoto, Akita, JP;

Tetsuya Ikuta, Akita, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/04 (2010.01); H01L 33/30 (2010.01); H01L 33/40 (2010.01); H01L 33/46 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/30 (2013.01); H01L 33/0062 (2013.01); H01L 33/40 (2013.01); H01L 33/46 (2013.01); H01L 33/62 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0066 (2013.01);
Abstract

To provide a bonding-type semiconductor light-emitting device which has excellent reliabilities with smaller time deviations of the light output power and the forward voltage. A semiconductor light-emitting deviceaccording to the present disclosure includes a conductive support substrate; a metal layercontaining a reflective metal provided on the conductive support substrate; a semiconductor laminateformed from a stack of a plurality of InGaAsP group III-V compound semiconductor layers containing at least In and P provided on the reflective metal layer; an n-type InGaAs contact layerA provided on the semiconductor laminate; and an n-side electrodeprovided on the n-type InGaAs contact layerA, wherein the center emission wavelength of light emitted from the semiconductor laminateis 1000 to 2200 nm.


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