The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2022
Filed:
Oct. 08, 2020
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Abdelkader Aliane, Grenoble, FR;
Jean-Louis Ouvrier-Buffet, Grenoble, FR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0216 (2014.01); H01L 31/103 (2006.01); H01L 31/105 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1812 (2013.01); H01L 31/0216 (2013.01); H01L 31/105 (2013.01); H01L 31/1037 (2013.01);
Abstract
The invention relates to a process for fabricating at least tensilely strained planar photodiodecomprising producing a stack formed from a semiconductor layermade of a first material and from an antireflection layerproducing a peripheral trenchthat opens onto a seed sublayermade of a second material of the antireflection layerepitaxy of a peripheral sectionmade of the second material in the peripheral trenchand returning to room temperature, a detecting sectionthen being tensilely strained because of the difference in coefficients of thermal expansion between the two materials.