The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2022
Filed:
Jul. 28, 2020
Amazing Microelectronic Corp., New Taipei, TW;
Chih-Ting Yeh, Hsinchu County, TW;
Sung-Chih Huang, Yilan County, TW;
Che-Hao Chuang, Hsinchu County, TW;
Amazing Microelectronic Corp., New Taipei City, TW;
Abstract
A vertical bipolar transistor device includes a heavily-doped semiconductor substrate, a first semiconductor epitaxial layer, at least one doped well, an isolation structure, and an external conductor. The heavily-doped semiconductor substrate and the doped well have a first conductivity type, and the first semiconductor epitaxial layer has a second conductivity type. The first semiconductor epitaxial layer is formed on the heavily-doped semiconductor substrate. The doped well is formed in the first semiconductor epitaxial layer. The isolation structure, formed in the heavily-doped semiconductor substrate and the first semiconductor epitaxial layer, surrounds the first semiconductor epitaxial layer and the at least one doped well. The external conductor is arranged outside the first semiconductor epitaxial layer and the doped well and electrically connected to the first semiconductor epitaxial layer and the doped well.