The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2022
Filed:
May. 28, 2020
Mitsubishi Electric Corporation, Tokyo, JP;
Shiro Hino, Tokyo, JP;
Yuichi Nagahisa, Tokyo, JP;
Koji Sadamatsu, Tokyo, JP;
Hideyuki Hatta, Tokyo, JP;
Kotaro Kawahara, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
In SiC-MOSFETs including Schottky diodes, passage of a bipolar current to a second well region formed in a terminal portion sometimes reduces a breakdown voltage. In a SiC-MOSFET including Schottky diodes according to the present invention, the second well region formed in the terminal portion has a non-ohmic connection to a source electrode, and a field limiting layer lower in impurity concentration than the second well region is formed in a surface layer area of the second well region which is a region facing a gate electrode through a gate insulating film.