The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2022

Filed:

Jan. 06, 2021
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Matthew David Smith, Kawasaki, JP;

Akira Mukai, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/205 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 29/0649 (2013.01); H01L 29/205 (2013.01); H01L 29/7787 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes first, second, and third electrodes, a semiconductor member, and a first insulating member. The semiconductor member includes a first face and a first side face. A third insulating region is between the first face and the third electrode in a second direction. A first insulating region is between the first side face and the third electrode in a first direction. The first side face includes first and second side face portions. The first side face portion is between the first face and the second side face portion in the second direction. At least a first angle between a first plane including the first face and the first side face portion and a second angle between the first plane and the second side face portion is less than 90 degrees. The second angle is different from the first angle.


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