The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2022
Filed:
Apr. 30, 2020
Denso Corporation, Kariya, JP;
Masakazu Itoh, Kariya, JP;
Hiroki Sakane, Kariya, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A semiconductor device includes a semiconductor substrate, multiple trench gate structures and an emitter region. The semiconductor substrate includes: a drift layer of a first conductivity type; a base layer of a second conductivity type disposed on the drift layer; and a collector layer of the second conductivity type, the collector layer disposed at a position opposite to the base layer with the drift layer sandwiched between the base layer and the collector layer. Each of the trench gate structures includes: a trench penetrating the base layer and reaching the drift layer; a gate insulation film is disposed at a wall surface of the trench; and a gate electrode disposed on the gate insulation film. The emitter region is disposed on a surface layer portion of the base layer and is in contact with the trench.