The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2022

Filed:

Jun. 17, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jisung Cheon, Ansan-si, KR;

Kiyoon Kang, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11556 (2017.01); G11C 5/02 (2006.01); G11C 5/06 (2006.01); H01L 27/11582 (2017.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); G11C 5/025 (2013.01); G11C 5/06 (2013.01); H01L 27/11582 (2013.01); H01L 29/7926 (2013.01);
Abstract

A memory device may include a substrate; a first stack structure comprising a plurality of first gate layers and a plurality of first interlayer insulating layers alternately stacked on the substrate; a second stack structure comprising a plurality of second gate layers and a plurality of second interlayer insulating layers alternately stacked on the first stack structure; and a channel structure penetrating the first stack structure and the second stack structure, wherein the channel structure comprises a first portion in a first channel hole penetrating the first stack structure, a second portion in a second channel hole penetrating the second stack structure, and a first protrusion located in a first recess recessed into one layer of the plurality of first interlayer insulating layers from a side portion of the first channel hole.


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