The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2022
Filed:
May. 21, 2020
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Hui-Chin Huang, Hsinchu, TW;
Kai-Yao Shih, Hsinchu, TW;
Yu-Mei Liao, Hsinchu County, TW;
Hsin-Yi Liao, Hsinchu, TW;
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Abstract
A method of manufacturing a memory structure including the following steps is provided. A first pad layer is formed on a substrate. Isolation structures are formed in the first pad layer and the substrate. At least one shape modification treatment is performed on the isolation structures. Each shape modification treatment includes the following steps. A first etching process is performed on the first pad layer to reduce a height of the first pad layer and to form first openings exposing sidewalls of the isolation structures. After the first etching process is performed, a second etching process is performed on the isolation structures to modify shapes of the sidewalls of the isolation structures exposed by the first openings. The first pad layer is removed to form a second opening between two adjacent isolation structures.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile