The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2022
Filed:
Jun. 29, 2021
Cystech Electronics Corp., New Taipei, TW;
Hsin-Yu Hsu, New Taipei, TW;
Yung-Chang Chen, New Taipei, TW;
CYSTECH ELECTRONICS CORP., New Taipei, TW;
Abstract
A composite power element includes a substrate structure, an insulation layer, a dielectric layer, a MOSFET, and a Zener diode. The MOSFET is formed in a transistor formation region of the substrate structure. The Zener diode is formed in a circuit element formation region of the substrate structure, and includes a Zener diode doping structure that is formed in the substrate structure and is covered by the insulation layer. The Zener diode doping structure includes a first P-type doped region and a first N-type doped region that is formed on an inner side of the first P-type doped region. The Zener diode further includes a Zener diode metal structure that is formed on the dielectric layer and sequentially passes through the dielectric layer and the insulation layer to be electrically connected to the first P-type doped region and the first N-type doped region.