The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2022

Filed:

Jul. 01, 2020
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Christian Cornelius Russ, Diedorf, DE;

Gabriel-Dumitru Cretu, Munich, DE;

Filippo Magrini, Munich, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/74 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0262 (2013.01); H01L 29/7408 (2013.01);
Abstract

A silicon-controlled rectifier (SCR) includes a semiconductor body including a first main surface and an active device region. First through fourth surface contact areas at the first main surface are arranged directly one after another along a lateral direction. The semiconductor body is electrically contacted at each surface contact area. First and third SCR regions of a first conductivity type directly adjoin the first and third surface contact areas, respectively. Second and fourth SCR regions of a second conductivity type directly adjoin the second and fourth surface contact areas, respectively. The second SCR region at least partially overlaps a first well region of the first conductivity type at the first main surface. The first SCR region at most partially overlaps the first well region at the first main surface, and is electrically connected to the second SCR region. The third SCR region is electrically connected to the fourth SCR region.


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