The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2022

Filed:

May. 22, 2019
Applicants:

Chongqing Boe Optoelectronics Technology Co., Ltd., Chongqing, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Maokun Tian, Beijing, CN;

Zhonghao Huang, Beijing, CN;

Xu Wu, Beijing, CN;

Yuanyao Dou, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1343 (2006.01); G02F 1/1368 (2006.01); G02F 1/1362 (2006.01); G02F 1/1333 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
G02F 1/136227 (2013.01); G02F 1/1368 (2013.01); G02F 1/13439 (2013.01); G02F 1/134309 (2013.01); H01L 27/124 (2013.01); H01L 27/1248 (2013.01); H01L 27/1259 (2013.01); G02F 2201/40 (2013.01);
Abstract

The disclosure relates to an array substrate. The array substrate may include a base substrate, an auxiliary electrode, a thin film transistor, a first insulating layer, a first electrode, a second insulating layer, and a second electrode sequentially arranged in a direction away from the base substrate. The auxiliary electrode is between the first insulating layer and the second insulating layer and insulated from the first electrode, the auxiliary electrode is coupled to a drain of the thin film transistor through a first via hole in the first insulating layer, and the second electrode is coupled to the auxiliary electrode through a second via hole in the second insulating layer.


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