The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2022
Filed:
Apr. 30, 2019
Applicant:
Elenion Technologies, Llc, New York, NY (US);
Inventors:
Ruizhi Shi, New York, NY (US);
Michael J. Hochberg, New York, NY (US);
Ari Jason Novack, New York, NY (US);
Thomas Wetteland Baehr-Jones, Arcadia, CA (US);
Assignee:
Nokia Solutions and Networks Oy, Espoo, FI;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/26 (2006.01); G02B 6/134 (2006.01); G02B 6/30 (2006.01); G02B 6/136 (2006.01); G02B 6/132 (2006.01); G02B 6/12 (2006.01); G02B 6/122 (2006.01); G02B 6/28 (2006.01);
U.S. Cl.
CPC ...
G02B 6/134 (2013.01); G02B 6/132 (2013.01); G02B 6/136 (2013.01); G02B 6/305 (2013.01); G02B 6/12002 (2013.01); G02B 6/1223 (2013.01); G02B 6/1228 (2013.01); G02B 6/2821 (2013.01); G02B 2006/12038 (2013.01);
Abstract
An integrated optical device fabricated in the back end of line process located within the vertical span of the metal stack and having one or more advantages over a corresponding integrated optical device fabricated in the silicon on insulator layer.