The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2022

Filed:

Nov. 25, 2019
Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventors:

Miwako Fujita, Tachikawa, JP;

Michio Tamate, Hachioji, JP;

Tamiko Asano, Hino, JP;

Yuhei Suzuki, Suzuka, JP;

Ryu Araki, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2020.01); G01R 29/26 (2006.01); G01R 29/08 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2626 (2013.01); G01R 29/26 (2013.01); G01R 29/0871 (2013.01);
Abstract

The electromagnetic noise of a semiconductor device is conveniently evaluated, and the electromagnetic noise of an apparatus equipped with the semiconductor device is estimated. An evaluation method is provided which includes causing one of a first device and a second device of a semiconductor device to perform a switching operation, the semiconductor device comprising the first device and second device connected in series and a third device and a fourth device connected to each other in series and connected parallel to a series circuit of the first device and second device; measuring voltage variation occurring between the third device and the fourth device during the switching operation; and outputting an evaluation benchmark for electromagnetic noise of the semiconductor device, based on the voltage variation.


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