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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11505456 B1

PDFFull Text
Date of Patent:
Nov. 22, 2022

Filed:

Dec. 20, 2019

Method for producing hollow structure and hollow structure

Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Takayuki Sumida, Kawasaki, JP;

Ayako Maruyama, Kawasaki, JP;

Takahiro Akiyama, Atsugi, JP;

Yutaka Setomoto, Sagamihara, JP;

Assignee:

Canon Kabushiki Kaisha, Tokyo, JP;

Attorney:

Canon U.S.A., Inc., IP Division

Primary Examiner:

Alexander Krzystan

Assistant Examiner:

Julie X Dang

Int. Cl.
CPC ...
B81C 1/00 (2006.01); B06B 1/02 (2006.01); H04R 19/00 (2006.01); B81B 3/00 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00531 (2013.01); B06B 1/0292 (2013.01); B81B 3/0021 (2013.01); B81C 1/00158 (2013.01); H04R 19/005 (2013.01); B81C 1/00476 (2013.01);
Abstract

A method includes a step of forming a sacrificial layer on a first film, a step of forming a second film on the sacrificial layer, a step of forming an etching opening that extends through at least one of the first film and the second film so as to communicate with the sacrificial layer, and a step of forming a hollow portion by etching the sacrificial layer using a gas containing a fluorine-containing gas and hydrogen via the etching opening, wherein a composition ratio of silicon to nitrogen in a first region having a face in contact with the sacrificial layer is larger than a composition ratio of silicon to nitrogen in a second region not including the first region.

Find Patent Forward Citations

Sumida, Takayuki. (2022). Method for producing hollow structure and hollow structure (U.S. Patent No. 11505456). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11505456

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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