The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2022
Filed:
Oct. 29, 2021
Rnd-isan, Ltd, Moscow, RU;
Isteq B.v., Eindhoven, NL;
Dmitriy Borisovich Abramenko, Moscow, RU;
Yurii Borisovich Kiryukhin, Moscow, RU;
Denis Alexandrovich Glushkov, Nieuwegein, NL;
Vladimir Mikhailovich Krivtsun, Moscow, RU;
Aleksandr Andreevich Lash, Moscow, RU;
RnD-ISAN, Ltd, Moscow, RU;
Isteq B.V., Eindhoven, NL;
Abstract
A light source with radiating plasma sustained in the gas-filled chamber by a focused beam of CW laser. The gas is inert gas with a purity of at least 99.99%. The chamber contains a metal housing with at least one window made of MgFfor outputting a plasma radiation. Each window is located in a hole of the housing on the end of a sleeve and is soldered to the sleeve by means of glass cement, and each sleeve is welded to the hole of the metal housing on the outside seam. The sleeves and the housing are made of an alloy with a coefficient of linear thermal expansion (CLTE), matched with the CLTE of the MgFcrystal in the direction perpendicular to the optical axis of the MgFcrystal. The technical result consists in expanding the radiation spectrum of the light source into the VUV region.