The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2022

Filed:

Dec. 30, 2020
Applicant:

Smarter Microelectronics (Guang Zhou) Co., Ltd., Guangzhou, CN;

Inventors:

Zhenfei Peng, Guangzhou, CN;

Qiang Su, Guangzhou, CN;

Kun Xiang, Guangzhou, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/52 (2006.01); H03F 3/24 (2006.01); H03F 3/195 (2006.01); H03F 1/10 (2006.01); H03G 3/30 (2006.01);
U.S. Cl.
CPC ...
H03F 1/523 (2013.01); H03F 1/10 (2013.01); H03F 3/195 (2013.01); H03F 3/245 (2013.01); H03G 3/3042 (2013.01); H03F 2200/31 (2013.01); H03F 2200/451 (2013.01);
Abstract

An overvoltage protection and gain bootstrap circuit of a power amplifier includes a power amplification transistor, and a diode reversely connected with a gate of the power amplification transistor. A negative electrode of the diode is connected with the gate of the power transistor, and a positive electrode of the diode is connected with a constant voltage source, such that a function of overvoltage protection and gain bootstrap of the circuit is realized by controlling a turn-on state of the diode. By adding a diode device to the circuit, gate-drain overvoltage protection for the power amplification transistor can be provided, and the gain of the amplifier can be improved before power compression, thereby improving linearity of the power amplifier. The structure of the circuit can be simple, with reduced occupied area hardware cost.


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