The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2022

Filed:

Sep. 11, 2017
Applicants:

Umicore, Brussels, BE;

Umicore Korea Ltd., Chungnam, KR;

Inventors:

Jean-Sébastien Bridel, Cheonan, KR;

Stijn Put, Olmen, BE;

Dongjoon Ihm, Cheonan, KR;

Daniel Nelis, Peer, BE;

Assignees:

UMICORE, Brussels, BE;

UMICORE KOREA LTD., Cheonan, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/131 (2010.01); H01M 4/133 (2010.01); H01M 4/134 (2010.01); H01M 4/505 (2010.01); H01M 4/525 (2010.01); H01M 4/38 (2006.01); H01M 10/0525 (2010.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 4/131 (2013.01); H01M 4/133 (2013.01); H01M 4/134 (2013.01); H01M 4/386 (2013.01); H01M 4/505 (2013.01); H01M 4/525 (2013.01); H01M 10/0525 (2013.01); H01M 2004/027 (2013.01); H01M 2004/028 (2013.01);
Abstract

A rechargeable electrochemical cell comprising a negative electrode and a positive electrode is described. The positive electrode comprises a product having as overall formula Lip(NiMnCoMAlA)O, wherein M signifies one or more elements from the group Mg, Ti, Cr, V and Fe, wherein A signifies one or more elements from the group F, C, Cl, S, Zr, Ba, Y, Ca, B, Sn, Sb, Na and Zn, and wherein 0.9<(x+y+z+m+n+a)<1.1, b<0.02, 0.9<p<1.110, 0.30<x<0.95, (y+z)≥0.09, 0≤m≤0.05, 0≤a≤0.05, and 0≤n≤0.15. The negative electrode comprises composite particles, wherein the composite particles comprise silicon-based domains in a matrix material. The individual silicon-based domains are either free silicon-based domains that are not or not completely embedded in the matrix or are fully embedded silicon-based domains that are completely surrounded by the matrix material.


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