The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2022
Filed:
Aug. 10, 2018
Hakusan, Inc., Ishikawa, JP;
Japan Advanced Institute of Science and Technology, Ishikawa, JP;
Ishikawa Prefecture, Ishikawa, JP;
Shigeyuki Tsurumi, Ishikawa, JP;
Kazumasa Yasuda, Ishikawa, JP;
Takeshi Sotome, Ishikawa, JP;
Mikio Koyano, Ishikawa, JP;
Takeshi Toyoda, Ishikawa, JP;
Akinari Matoba, Ishikawa, JP;
Toshiharu Minamikawa, Ishikawa, JP;
HAKUSAN, INC., Ishikawa, JP;
JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, Ishikawa, JP;
ISHIKAWA PREFECTURE, Ishikawa, JP;
Abstract
A thermoelectric material includes a parent phase in which an MgSiSn alloy is a main component, a void formed in the parent phase, and a silicon layer that is formed on at least a wall surface of the void and that includes silicon as a main component. The thermoelectric material further includes MgO in an amount of 1.0 wt. % or more and 20.0 wt. % or less. The silicon layer includes amorphous Si, or amorphous Si and nanosized Si crystals, and the parent phase includes a region in which the composition ratio of the Si of the chemical composition of the MgSiSn alloy is higher than in the other regions and a region in which the composition ratio of the Sn of the chemical composition of the MgSiSn alloy is higher than in the other regions. With these configurations, the thermoelectric material realizes both lower thermal conductivity and lower electrical resistivity.