The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2022

Filed:

Oct. 20, 2019
Applicant:

Playnitride Display Co., Ltd., MiaoLi County, TW;

Inventor:

Yu-Chu Li, MiaoLi County, TW;

Assignee:

PlayNitride Display Co., Ltd., MiaoLi County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/36 (2010.01); H01L 33/02 (2010.01);
U.S. Cl.
CPC ...
H01L 33/36 (2013.01); H01L 33/02 (2013.01);
Abstract

A light-emitting device includes an epitaxial structure, and first and second electrodes. The epitaxial structure has a first surface and a second surface opposite to each other, first dislocation density regions and second dislocation density regions. The first dislocation density regions and the second dislocation density regions are alternately disposed between the first surface and the second surface. A dislocation density of each first dislocation density region is lower than a dislocation density of each second dislocation density region and a quantity of the first dislocation density regions is at least ten. The epitaxial structure further includes a light-emitting layer, a first-type semiconductor layer and a second-type semiconductor layer disposed on two opposite sides of the light-emitting layer. The first electrode and the second electrode are electrically connected to the first-type semiconductor layer and the second-type semiconductor layer, respectively. A light-emitting device structure adopting the light-emitting device is provided.


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