The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2022

Filed:

Jan. 23, 2018
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Xue Wang, Regensburg, DE;

Markus Broell, Cork, IE;

Assignee:

OSRAM OLED GmbH, Regensburg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/14 (2010.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01);
U.S. Cl.
CPC ...
H01L 33/14 (2013.01); H01L 21/02115 (2013.01); H01L 21/041 (2013.01);
Abstract

An optoelectronic semiconductor chip including a semiconductor layer sequence containing a phosphide compound semiconductor material, wherein the semiconductor layer sequence includes a p-type semiconductor region, an n-type semiconductor region and an active layer disposed between the p-type semiconductor region and the n-type semiconductor region, a current spreading layer including a transparent conductive oxide adjoining the p-type semiconductor region, and a metallic p-connection layer at least regionally adjoining the current spreading layer, wherein the p-type semiconductor region includes a p-contact layer adjoining the current spreading layer, the p-contact layer contains GaP doped with C, a C dopant concentration in the p-contact layer is at least 5*10cm, and the p-contact layer is less than 100 nm thick.


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