The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2022
Filed:
Dec. 07, 2017
First Solar, Inc., Tempe, AZ (US);
Hongbo Cao, Cohoes, NY (US);
Sachit Grover, Campbell, CA (US);
William Hullinger Huber, Ottawa Hills, OH (US);
Xiaoping Li, Santa Clara, CA (US);
Dingyuan Lu, San Jose, CA (US);
Roger Malik, Santa Clara, CA (US);
Hongying Peng, Clifton Park, NY (US);
Joseph John Shiang, Niskayuna, NY (US);
Qianqian Xin, Shanghai, CN;
Gang Xiong, Santa Clara, CA (US);
First Solar, Inc., Tempe, AZ (US);
Abstract
A photovoltaic device () can include an absorber layer (). The absorber layer () can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×10cm. The absorber layer () can include oxygen in a central region of the absorber layer (). The absorber layer () can include an alkali metal in the central region of the absorber layer (). Methods for carrier activation can include exposing an absorber layer () to an annealing compound in a reducing environment (). The annealing compound () can include cadmium chloride and an alkali metal chloride.