The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2022
Filed:
Oct. 29, 2019
Applicant:
Lapis Semiconductor Co., Ltd., Kanagawa, JP;
Inventor:
Hiroshi Shibata, Miyagi, JP;
Assignee:
LAPIS SEMICONDUCTOR CO., LTD., Yokohama, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 21/02 (2006.01); H01L 27/02 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/945 (2013.01); H01L 21/0201 (2013.01); H01L 27/0207 (2013.01); H01L 28/40 (2013.01);
Abstract
A semiconductor wafer manufacturing method including: forming a plurality of trench capacitors at a main surface of a semiconductor wafer, wherein each of the plurality of trench capacitors is configured as unit cells that internally include unit trench capacitors, and wherein a length component in a predetermined direction of a layout pattern of trenches of the plurality of trench capacitors is made equivalent, within a fixed tolerance range, to a length component in a direction that intersects the predetermined direction.