The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2022

Filed:

Oct. 23, 2019
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Ching-Chia Huang, Taipei, TW;

Tseng-Fu Lu, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 21/762 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0607 (2013.01); H01L 21/76237 (2013.01); H01L 29/4236 (2013.01); H01L 29/7813 (2013.01); H01L 29/7825 (2013.01); H01L 27/10876 (2013.01); H01L 29/42336 (2013.01); H01L 29/42352 (2013.01);
Abstract

A semiconductor structure includes an active region, an isolation structure, a first gate structure, and a second gate structure. The active region is disposed over a semiconductor substrate and has a first portion, a second portion, and a third portion. The third portion is between the first portion and the second portion. A shape of the first portion is different from a shape of the third portion, in a top view. The isolation structure is disposed over the semiconductor substrate and surrounds the active region. The first gate structure is disposed between the first portion and the third portion of the active region. The second gate structure is disposed between the second portion and the third portion of the active region.


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