The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2022

Filed:

May. 14, 2021
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Sunwoo Lee, Yongin-si, KR;

Kihyun Kim, Yongin-si, KR;

Younggil Park, Yongin-si, KR;

Seulgi Lee, Yongin-si, KR;

Geunhyuk Choi, Yongin-si, KR;

Jaebum Han, Yongin-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1229 (2013.01); H01L 27/124 (2013.01); H01L 27/1255 (2013.01); H01L 29/78693 (2013.01); H01L 29/78696 (2013.01);
Abstract

A display apparatus includes a first silicon transistor including a first semiconductor layer including a silicon-based semiconductor and a first gate electrode; a first oxide transistor including a second semiconductor layer and a second gate electrode, the second semiconductor layer including an oxide-based semiconductor; an upper insulating layer on the first and second semiconductor layers; and a first connection electrode on the upper insulating layer, electrically connected to the first semiconductor layer through a first contact hole of the upper insulating layer, and electrically connected to the second semiconductor layer through a second contact hole of the upper insulating layer. The second semiconductor layer includes a channel region, a source region, and a drain region, and a first distance between the channel region of the second semiconductor layer and the first contact hole is about 2 μm or greater.


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