The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2022

Filed:

Feb. 17, 2021
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Tomas Manuel Reiter, Munich, DE;

Christoph Koch, Salzkotten, DE;

Mark Nils Muenzer, Neubiberg, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/057 (2006.01); H01L 23/50 (2006.01); H01L 27/06 (2006.01); H01L 25/07 (2006.01); H01L 43/06 (2006.01); H02P 27/06 (2006.01); H01L 21/48 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/072 (2013.01); H01L 21/4817 (2013.01); H01L 23/057 (2013.01); H01L 23/50 (2013.01); H01L 25/50 (2013.01); H01L 43/06 (2013.01); H02P 27/06 (2013.01);
Abstract

Described is a power semiconductor module that includes: a frame made of an electrically insulative material; a first substrate seated in the frame; a plurality of power semiconductor dies attached to the first substrate; a plurality of signal pins attached to the first substrate and electrically connected to the power semiconductor dies; a busbar extending from the first substrate through a side face of the frame; a current sensor module seated in a receptacle of the frame in sensing proximity of the busbar, the current sensor module including a current sensor attached to a circuit board; and a potting material fixing the current sensor module to the frame such that no air gap is present between the current sensor and the busbar. The potting material contacts the frame and the current sensor. Methods of producing the power semiconductor module are also described.


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