The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2022

Filed:

Apr. 22, 2020
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Ying-Cheng Chuang, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); H01L 21/311 (2006.01); G03F 1/42 (2012.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); G03F 1/42 (2013.01); H01L 21/0274 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 2223/54426 (2013.01);
Abstract

The present disclosure is related to a method of forming a pattern, including the steps of: providing a structure including a substrate and a target layer, in which the target layer is disposed on the substrate, and the target layer includes a central area and a periphery area; forming a plurality of core patterns and a linear spacer pattern on the central area, in which a width of the linear spacer pattern is wider than 50 nm; covering a photoresist on the periphery area; removing a portion of the central area not covered by the plurality of core patterns and not covered by the linear spacer pattern to form a pattern in the central area, and removing the photoresist, the linear spacer pattern and the plurality of core patterns to expose the pattern.


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