The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2022

Filed:

Dec. 27, 2019
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Seung-Hwan Kim, Seoul, KR;

Su-Ock Chung, Seoul, KR;

Seon-Yong Cha, Chungcheongbuk-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/4097 (2006.01); H01L 27/108 (2006.01); G11C 7/18 (2006.01); G11C 11/401 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4097 (2013.01); G11C 7/18 (2013.01); G11C 11/401 (2013.01); H01L 27/10805 (2013.01);
Abstract

A memory device includes: a substrate; a bit line which is vertically oriented from the substrate; a plate line which is vertically oriented from the substrate; and a memory cell provided with a transistor and a capacitor that are positioned in a lateral arrangement between the bit line and the plate line, wherein the transistor includes: an active layer which is laterally oriented to be parallel to the substrate between the bit line and the capacitor; and a line-shaped lower word line and a line-shaped upper word line vertically stacked with the active layer therebetween and oriented to intersect with the active layer.


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