The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2022

Filed:

Sep. 08, 2021
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Nackhyeon Keum, Yongin-si, KR;

Jihyun Ka, Yongin-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/3225 (2016.01); G09G 3/00 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
G09G 3/3225 (2013.01); G09G 3/006 (2013.01); G09G 2300/0426 (2013.01); G09G 2300/0452 (2013.01); G09G 2300/0861 (2013.01); G09G 2320/0242 (2013.01); G09G 2330/12 (2013.01); H01L 27/3276 (2013.01);
Abstract

A display panel and a display apparatus, in which a particular color is prevented from being emphasized and displayed in a display area even when the display panel passes testing. The display panel includes: a substrate including a first area and a second area in which first connection nodes and second connection nodes are arranged, the first and second areas being separate from each other; first data lines on the first area; second data lines on the second area and respectively connected to second connection nodes; first connection lines respectively connecting the first data lines to the first connection nodes; a first voltage line; first transistors respectively connected between the first connection nodes and the first voltage line; second transistors respectively connected between the second connection nodes and the first voltage line; and a first gate line connected to gates of the first transistors and gates of the second transistors.


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