logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11500292 B1

PDFFull Text
Date of Patent:
Nov. 15, 2022

Filed:

Apr. 16, 2020

Material for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and compound for forming organic film

Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Daisuke Kori, Joetsu, JP;

Keisuke Niida, Joetsu, JP;

Takashi Sawamura, Joetsu, JP;

Seiichiro Tachibana, Joetsu, JP;

Takeru Watanabe, Joetsu, JP;

Tsutomu Ogihara, Joetsu, JP;

Assignee:

SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

Caleen O Sullivan

Int. Cl.
CPC ...
G03F 7/09 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); G03F 7/16 (2006.01); C07C 235/84 (2006.01); C07D 403/14 (2006.01); C07C 43/215 (2006.01); C07D 207/448 (2006.01); C08G 73/06 (2006.01); G03F 7/20 (2006.01); G03F 7/38 (2006.01); G03F 7/32 (2006.01); C07D 209/48 (2006.01); G03F 7/027 (2006.01);
U.S. Cl.
CPC ...
G03F 7/094 (2013.01); C07C 43/215 (2013.01); C07C 235/84 (2013.01); C07D 207/448 (2013.01); C07D 209/48 (2013.01); C07D 403/14 (2013.01); C08G 73/0672 (2013.01); G03F 7/027 (2013.01); G03F 7/091 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/2006 (2013.01); G03F 7/2041 (2013.01); G03F 7/322 (2013.01); G03F 7/38 (2013.01); H01L 21/0276 (2013.01); H01L 21/02118 (2013.01); H01L 21/02282 (2013.01); H01L 21/0332 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/31058 (2013.01); C07C 2603/18 (2017.05);
Abstract

An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate, and a material for forming an organic film containing the compound. A material for forming an organic film, including: (A) a compound for forming an organic film shown by the following general formula (1A); and (B) an organic solvent,

Find Patent Forward Citations

Quick Actions:

Kori, Daisuke. (2022). Material for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and compound for forming organic film (U.S. Patent No. 11500292). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11500292

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…