The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2022

Filed:

Mar. 05, 2019
Applicant:

Osram Oled Gmbh, Regensburg, DE;

Inventors:

Bruno Jentzsch, Regensburg, DE;

Alvaro Gomez-Iglesias, Regensburg, DE;

Alexander Tonkikh, Wenzenbach, DE;

Stefan Illek, Donaustauf, DE;

Assignee:

OSRAM OLED GMBH, Regensburg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/026 (2006.01); H01S 5/02 (2006.01); H01S 5/028 (2006.01); H01S 5/10 (2021.01); H01S 5/20 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0267 (2013.01); H01S 5/0217 (2013.01); H01S 5/0287 (2013.01); H01S 5/1064 (2013.01); H01S 5/1085 (2013.01); H01S 5/20 (2013.01);
Abstract

A semiconductor laser is provided that includes a semiconductor layer sequence and electrical contact surfaces. The semiconductor layer sequence includes a waveguide with an active zone. Furthermore, the semiconductor layer sequence includes a first and a second cladding layer, between which the waveguide is located. At least one oblique facet is formed on the semiconductor layer sequence, which has an angle of 45° to a resonator axis with a tolerance of at most 10°. This facet forms a reflection surface towards the first cladding layer for laser radiation generated during operation. A maximum thickness of the first cladding layer is between 0.5 M/n and 10 M/n at least in a radiation passage region, wherein n is the average refractive index of the first cladding layer and M is the vacuum wavelength of maximum intensity of the laser radiation.


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